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| MBR3045WT SWITCHMODEt Power Rectifier These state-of-the-art devices use the Schottky Barrier principle with a platinum barrier metal. Features http://onsemi.com * Dual Diode Construction; Terminals 1 and 3 may be Connected for * * * * * Parallel Operation at Full Rating Guardring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature Popular TO-247 Package Pb-Free Package is Available* SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS 1 3 2 4 Mechanical Characteristics * Case: Epoxy, Molded * Weight: 4.3 Grams (Approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 105C) Per Device Per Diode Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz) Per Diode Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz) Per Diode (See Figure 6) Storage Temperature Range Operating Junction Temperature (Note 1) Peak Surge Junction Temperature (Forward Current Applied) Voltage Rate of Change (Rated VR) 1 Leads are Readily Solderable MAXIMUM RATINGS Symbol VRRM VRWM VR IF(AV) Max 45 Unit V 2 3 TO-247 CASE 340L PLASTIC MARKING DIAGRAM A 30 15 30 A MBR3045WT AYWWG IFRM IFSM 200 A IRRM Tstg TJ TJ(pk) dv/dt 2.0 -65 to +175 -65 to +175 175 10,000 A C C C V/ms A Y WW G = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION Device MBR3045WT MBR3045WTG Package TO-247 TO-247 (Pb-Free) Shipping 30 Units/Rail 30 Units/Rail Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2010 March, 2010 - Rev. 4 1 Publication Order Number: MBR3045WT/D MBR3045WT THERMAL CHARACTERISTICS (Per Diode) Rating Thermal Resistance, Junction-to-Case Junction-to-Ambient Symbol RqJC RqJA vF Max 1.4 40 Unit C/W ELECTRICAL CHARACTERISTICS (Per Diode) Instantaneous Forward Voltage (Note 2) (iF = 20 Amps, TC = 125C) (iF = 30 Amps, TC = 125C) (iF = 30 Amps, TC = 25C) Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. V 0.6 0.72 0.76 mA 100 1.0 iR i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 100 50 30 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5.0 10 15 20 25 30 35 40 45 50 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) 100 TJ = 150C IR , REVERSE CURRENT (mA) TJ = 150C 10 125C 100C 1.0 75C 25C 0.1 25C 0.01 Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 2 MBR3045WT PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 20 I 15 SQUARE WAVE 10 20 I (CAPACITIVE LOAD) PK + 20, 10, 5 I PK + p (RESISTIVE LOAD) I AV AV SINE WAVE RESISTIVE LOAD SQUARE WAVE 15 10 dc 5.0 TJ = 125C dc 5.0 (CAPACITIVE LOAD) PK + 20, 10, 5 I 0 60 70 80 90 I AV 0 0 5.0 10 15 20 25 30 35 40 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 100 110 120 130 140 150 160 TC, CASE TEMPERATURE (C) Figure 3. Current Derating (Per Leg) Figure 4. Forward Power Dissipation (Per Leg) +150 V, 10 mAdc 3000 2000 C, CAPACITANCE (pF) 12 V 1000 900 800 700 600 500 400 300 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 2.0 ms 1.0 kHz CURRENT AMPLITUDE ADJUST 0-10 AMPS 100 W CARBON 100 2N2222 VCC 12 Vdc 2.0 kW D.U.T. + 4.0 mF 2N6277 1.0 CARBON 1N5817 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance Figure 6. Test Circuit for Repetitive Reverse Current http://onsemi.com 3 MBR3045WT PACKAGE DIMENSIONS TO-247 CASE 340L-02 ISSUE E -T- -B- U L 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L N P Q U W MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 C E N A 1 2 3 -Q- 0.63 (0.025) P -Y- M TB M K F 2 PL W D 3 PL 0.25 (0.010) G J H M YQ S SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 4 MBR3045WT/D |
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